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21ifos-2025-subject-08-004
IFOS 2025Paper II8 Marks

What is Josephson effect? How can Josephson junctions be used to produce macroscopic quantum interference?

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22cse-2025-subject-08-003
CSE 2025Paper II10+5=15 Marks

Explain the cause of hysteresis phenomenon in ferromagnetic materials. What does the area of the hysteresis loop signify?

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23ifos-2025-subject-08-006
IFOS 2025Paper II8 Marks

What is Boolean algebra? State De Morgan's theorems and determine the output expressions for the circuit shown below by using De Morgan's theorems :

Physics Diagram ifos-q-3-065-fig-1
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24ifos-2025-subject-08-005
IFOS 2025Paper II10+5=15 Marks

(i) Give a qualitative description of the BCS theory and explain how it accounts for the superconducting state. (ii) The critical field of niobium is 1 \times 10^5\text{ A/m} at 8\text{ K} and 2 \times 10^5\text{ A/m} at absolute zero. Find the transition temperature of the element.

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25ifos-2025-subject-08-002
IFOS 2025Paper II10 Marks

What is an oscillator? Explain the Barkhausen criterion and working principle of an R-C phase-shift oscillator with suitable circuit diagram.

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26ifos-2025-subject-08-008
IFOS 2025Paper II8 Marks

What is a microprocessor? Briefly mention the basic units of a microprocessor by drawing descriptive block diagram of 8085 microprocessor.

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27cse-2025-subject-08-004
CSE 2025Paper II20 Marks

Classify diamagnetic, paramagnetic and ferromagnetic materials in terms of their magnetic susceptibility (\chi). Plot and explain the variation of \frac{1}{\chi} with temperature for the three materials.

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28ifos-2025-subject-08-003
IFOS 2025Paper II10 Marks

Consider an energy band which is filled with electrons up to a certain value k_1 \left(k_1 < \frac{\pi}{a}\right). Determine the total effective number of free electrons in the energy band. Comment on the electron distribution in an insulator, intrinsic semiconductor and metals at 0\text{ K}. Symbols have their usual meanings.

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29cse-2025-subject-08-008
CSE 2025Paper II10 Marks

In powder diffraction method pattern for lead with radiation of wavelength \lambda = 1\cdot 54 \text{ \AA}, the (220) Bragg reflection angle is \theta = 32^\circ. Find the radius of the atom.

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30cse-2025-subject-08-006
CSE 2025Paper II

What is a microprocessor? Describe the internal functioning of a microprocessor with block diagrams.

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31ifos-2025-subject-08-009
IFOS 2025Paper II10+5=15 Marks

(i) How will you obtain OR gate from NAND gate? Draw the logic circuit for the following expressions : Y = ABC + \bar{D} Y = (\bar{E}G + B)H (ii) What is a thermistor? Explain the working of thermistor by drawing temperature-resistance curve.

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32cse-2024-subject-08-004
CSE 2024Paper II15 Marks

An RC-coupled transistor amplifier has mid-frequency gain A_{\text{vm}} = 100. The values of the lower and upper cut-off frequencies are f_1 = 20\text{ Hz} and f_2 = 50\text{ kHz}. Find the frequencies at which the gain is reduced to 80.

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33cse-2024-subject-08-006
CSE 2024Paper II15 Marks

Compare the working of FET and MOSFET with their structure, I-V curve and transfer characteristics.

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34cse-2024-subject-08-003
CSE 2024Paper II10 Marks

How does supercritical magnetic field depend on temperature ? For a superconducting specimen, the critical magnetic fields are respectively 1\cdot 45 \times 10^5\text{ A/m} and 4\cdot 2 \times 10^5\text{ A/m} for 14\text{ K} and 13\text{ K}. Determine the superconducting transition temperature and the critical field at 0\text{ K}.

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35ifos-2024-subject-08-003
IFOS 2024Paper II4 Marks

(ii) Recalculate the intrinsic carrier concentration at T = 450\text{ K} by assuming that the effective electron and hole masses in the respective bands decrease by 0\cdot 5\%.

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36ifos-2024-subject-08-005
IFOS 2024Paper II15 Marks

State the characteristics of an ideal Op-Amp. Explain the use of an Op-Amp as a summing amplifier and a differentiator.

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37ifos-2024-subject-08-002
IFOS 2024Paper II6 Marks

Given that for intrinsic Si at T = 300\text{ K}, the band gap is 1\cdot 1\text{ eV} and the intrinsic carrier concentration is n_i = 1\cdot 5 \times 10^{10}\text{ cm}^{-3}. (i) Calculate the intrinsic carrier concentration at T = 450\text{ K}. Assume that the band gap at T = 450\text{ K} is 1\cdot 08\text{ eV}.

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38ifos-2024-subject-08-006
IFOS 2024Paper II15 Marks

The n\text{-}p\text{-}n transistor given below has \beta = 100, I_{CO} = 12\text{ nA} and V_{BE} = 0\cdot 8\text{ V}. Determine the transistor currents and the region of operation of the transistor. What happens if R_C is indefinitely increased?

Physics Diagram ifos-q-8-083-fig-1
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39ifos-2024-subject-08-001
IFOS 2024Paper II8 Marks

Consider the planes with indices (1\ 0\ 0) and (0\ 0\ 1); the lattice is f.c.c., and the indices refer to the conventional cubic cell. What are the indices of these planes when referred to the primitive axes : \vec{a}_1 = \frac{a}{2}(\hat{x}+\hat{y}), \vec{a}_2 = \frac{a}{2}(\hat{y}+\hat{z}) and \vec{a}_3 = \frac{a}{2}(\hat{z}+\hat{x})?

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40cse-2024-subject-08-002
CSE 2024Paper II10 Marks

The spacing between successive (100) planes in sodium chloride is 1\cdot 41\text{ \AA}. X-rays incident on the surface of the crystal are found to give rise to second order Bragg reflections at a glancing angle 10^\circ. Calculate the wavelength of X-ray radiations.

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