ifos • paper_2 • solid_state_electronicsifos-2024-subject-08-002
Carrier concentration — UPSC IFoS 2024 Physics PYQ
Buy PYQ Solution Manual →Given that for intrinsic Si at T = 300\text{ K}, the band gap is 1\cdot 1\text{ eV} and the intrinsic carrier concentration is n_i = 1\cdot 5 \times 10^{10}\text{ cm}^{-3}. (i) Calculate the intrinsic carrier concentration at T = 450\text{ K}. Assume that the band gap at T = 450\text{ K} is 1\cdot 08\text{ eV}.
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