ifos • paper_2 • solid_state_electronicsifos-2019-subject-08-003
Field-effect transistor — UPSC IFoS 2019 Physics PYQ
Buy PYQ Solution Manual →An n-channel silicon JFET has donor concentration of 2 \times 10^{21}/\text{m}^3 and a channel width of 4~\mu\text{m}. If the dielectric constant of silicon is 12, find the pinch-off voltage. If the FET operates with a gate-source voltage of -2~\text{V}, what is the saturation voltage V_{\text{Dsat}}?
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